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API Intros 1kW Pulsed Power Amplifiers
Pulsed power amplifier.
Orlando, FL — API Technologies Corp. (NASDAQ:ATNY) expands its line of Gallium Nitride (GaN) based power amplifiers to include designs that operate with output power levels up to 1,000 watts and frequencies to 18GHz. These new pulsed, solid-state power amplifiers can serve as a cost-effective replacement for travelling wave tubes (TWT), as the amplifiers' long life, and reduced size and weight offer better efficiencies than their TWT counterparts.
API's GaN-based pulsed power amplifiers can be used in numerous military and high end commercial applications including radar, communication transmitters, and jamming systems.
These unique power amplifiers are designed and manufactured in the United States and utilize in-house thin and thick film technologies, as well as Surface Mount Technology (SMT). The power amplifies are offered in hermetically sealed packages using mixed SMT and chip-and-wire manufacturing processes.
For high frequency applications, waveguide components can be integrated into the floor of the package to reduce combining losses and further increase functionality such as embedded harmonic filtering. Other options of the GaN-based power amplifiers include sleep mode, blanking, forward/reverse power detection, discrete power supply designs for wide DC input voltage ranges, as well as microprocessor-based control features for bias optimization, temperature compensation, fault monitoring, and customer interferences.
Specifications: operating frequencies up to 18GHz; pulsed power output levels from 500W to 1kW; in-house chip and wire (hybrid) and SMT manufacturing; customer defined control features can be added to complement amplifier performance.
Contact: API Technologies Corp., 4705 S. Apopka Vineland Road, Suite 210, Orlando, FL 32819
888-553-7531 or 855-294-3800 E-mail: email@example.com Web:
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